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Agarbattiperfumeformulapdf107. downloadÂ .The present invention relates generally to semiconductor fabrication and, more particularly, to a method of treating photoresist masking layer exposed during etching process to prevent etch residue formation.
In semiconductor device fabrication, there is a trend to design devices that are smaller. This means that components within the devices are designed to have smaller dimensions. Components that are fabricated into the devices have fewer, and/or smaller, elements.
As the dimensions of components within semiconductor devices are reduced, it is increasingly difficult to form the features of those components, such as shallow trench isolations (STIs), using conventional etching processes. Typically, a photoresist pattern is formed on a layer (e.g., oxide) that is to be etched. The layer is then selectively etched through the photoresist pattern in order to form the desired feature (e.g., STI). After etching, a portion of the photoresist pattern may remain on the layer. In conventional processes, the photoresist pattern may be removed to complete fabrication of the feature. However, because the remaining photoresist pattern is formed over the feature being etched, etch residue may form on the feature. These residues are commonly formed when removing the patterned photoresist in a wet etching process. Because the etch reaction is generally an anisotropic process, the etch residue is formed in such a way as to have a final shape that corresponds to the shape of the feature being etched. As the dimensions of device components are further reduced, the dimensions of the etch residue may be greater than the feature being etched. This causes defects in the devices due to the presence of etch residue.
Therefore, there is a need in the art for a method of fabricating semiconductor